Arthur R. Smith
Publication List
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55.
Molecular Beam Epitaxial
Growth of Zinc-Blende FeN(111) on Wurtzite GaN(0001), Wenzhi Lin, Jeongihm
Pak,
David C. Ingram, and Arthur R. Smith, Journal
of Alloys and Compounds 463,
257 (2008). [doi:10.1016/j.jallcom.2007.10.029]
54.
Surface
Reconstructions of Cubic GaN(001) Grown by Radio Frequency Nitrogen
Plasma Molecular Beam Epitaxy Under Gallium-rich Conditions,
Muhammad B. Haider, Rong Yang, Costel Constantin, Erdong Lu, Arthur R.
Smith, and Hamad A. H. Al-Brithen, Journal of Applied Physics
100(08), 083516 (2006).
53.
Reconstruction
Control of Magnetic Properties during
Epitaxial Growth of Ferromagnetic Mn3-dGa on Wurtzite GaN(0001),
Erdong
Lu, David C. Ingram, Arthur R. Smith, J. W. Knepper, and F. Y. Yang,
Phys. Rev. Lett. 97, 146101 (2006).
47.
Room
Temperature Ferromagnetism in CrGaN: Dependence on Growth Conditions in
rf N-Plasma Molecular Beam Epitaxy, Muhammad B. Haider, Rong Yang,
Hamad Al-Brithen, Costel Constantin, David Ingram, Arthur R. Smith,
Gabriel Caruntu, and
Charles J. O'Connor, J. Crystal Growth 285(3),
300 (2005).
46. Scanning
Tunneling Microscopy and Surface Simulation of Zinc-Blende GaN(001)
Intrinsic 4x Reconstruction: Linear Gallium Tetramers?, Hamad A.
AL-Brithen, Rong Yang, Muhammad B. Haider, Costel Constantin, Erdong
Lu, Arthur R.
Smith, Nancy Sandler, and Pablo Ordejon, Physical Review Letters
95,
146102 (2005).
38.
Aspects
of Spin-Polarized Scanning Tunneling Microscopy at the Atomic Scale:
Experiment, Theory, and Simulation, Arthur R. Smith, Rong
Yang, Haiqiang Yang, Walter R. L. Lambrecht, Alexey
Dick, and Joerg Neugebauer, Surface Science 561(2-3), 154
(2004).
34. Ga/N Flux
Ratio Influence on Mn Incorporation, Surface Morphology, and
Lattice Polarity During Radio Frequency Molecular Beam Epitaxy
of (Ga,Mn)N, Muhammad B. Haider, Costel Constantin, Hamad
Al-Brithen, Haiqiang Yang, Eugen Trifan, David Ingram, Arthur
R. Smith, C. V. Kelly and Y. Ijiri, Journal of Applied Physics 93(9),
5274 (2003).
32. Phase
Stability, Nitrogen Vacancies, Growth Mode, and Surface
Structure of ScN(001) Under Sc-rich Conditions, Hamad A.
H. Al-Brithen, Eugen M. Trifan, David C. Ingram, Arthur R. Smith,
and Daniel Gall, J. Crystal Growth
242, 345 (2002).
27. Surface Morphology of GaN
Surfaces during Molecular
Beam Epitaxy, R. M. Feenstra, Huajie Chen, V. Ramachandran,
C. D. Lee, A. R. Smith, J. E. Northrup, T. Zywietz, J. Neugebauer,
and D. W. Greve, Surf. Sci. Review and Letters 7, 601 (2000).
26. Structure of GaN(0001):
The laterally contracted Ga bilayer model, J. E. Northrup, J.
Neugebauer, R. M. Feenstra, A. R. Smith, Phys. Rev. B 61, 9932
(2000).
25. Reconstructions of GaN
and InGaN Surfaces, R. M. Feenstra,
Huajie Chen, V. Ramachandran, A. R. Smith, and D. W. Greve,
Appl. Surf. Sci. 166, 165 (2000).
24. Comment on "Structures of
GaN(0001)-(2x2),-(4x4),
and -(5x5) Surface Reconstructions , V. Ramachandran,
C. D. Lee, R. M. Feenstra, A. R. Smith, and D. W. Greve, Phys. Rev.
Lett. 84, 4014 (2000).
23. Structure of Clean and
Arsenic-Covered GaN(0001)
Surfaces , V. Ramachandran, C. D. Lee, R. M. Feenstra, A. R.
Smith, J. E. Northrup, and D. W. Greve, J. Crystal Growth 209,
355 (2000).
22. GaN(0001) Surface
Structures Studied Using Scanning
Tunneling Microscopy and First-Principles Total Energy Calculations ,
A. R. Smith, R. M. Feenstra, D. W. Greve, M.-S. Shin, M. Skowronski, J.
Neugebauer, and J. E. Northrup, Surface Science 423, 70 (1999).
21. Surface Reconstruction
During Molecular Beam Epitaxial
Growth of GaN(0001), A. R. Smith, R. M. Feenstra, D. W. Greve,
A. Ptak, T. H. Myers, M.-S. Shin, M. Skowronski, MRS Internet
J. Nitride Semicond. Res. 3, 12 (1998).
20. Reconstructions of
GaN(0001) and (000-1) Surfaces:
Ga-rich Metallic Structures, A. R. Smith, R. M. Feenstra,
D. W. Greve, M.-S. Shih, M. Skowronski, J. Neugebauer, and J. E.
Northrup, J. Vac. Sci. Technol. B 16 (4), 2242 (1998).
19. Determination of Wurtzite
GaN Lattice Polarity Based
on Surface Reconstruction, A. R. Smith, R. M. Feenstra,
D. W. Greve, M.-S. Shin, M. Skowronski, J. Neugebauer, and J. E.
Northrup, Appl. Phys. Lett. 72, 2114 (1998).
18. Wurtzite GaN Surface
Structures Studied by Scanning
Tunneling Microscopy and Reflection High Energy Electron Diffraction,
A. R. Smith, V. Ramachandran, R. M. Feenstra, D. W.
Greve, M.-S. Shin, M. Skowronski, J. Neugebauer, and J. E. Northrup, J.
Vac. Sci. Technol. A 16, 1641 (1998).
17. Scanning Tunneling
Microscopy of the GaN(000-1)
Surface, A. R. Smith, R. M. Feenstra, D. W. Greve, J. Neugebauer,
and J. E. Northrup, Applied Physics A 66, S947 (1998).
16. Preparation of Atomically
Flat Surfaces on Silicon Carbide Using Hydrogen Etching, V.
Ramachandran, M.F. Brady, A.R. Smith, R.M. Feemstra, and D.W. Greve,
Journal of Electronic Materials 27(4),
308 (1998).
15. Reconstructions of the
GaN(000-1) Surface, A.
R. Smith, R. M. Feenstra, D. W. Greve, J. Neugebauer, and J. E.
Northrup, Phys. Rev. Lett. 79, 3934 (1997).
14. Identification of First
and Second Layer Aluminum
Atoms in Dilute AlGaAs Using Cross-Sectional Scanning Tunneling
Microscopy, Arthur R. Smith, Kuo-Jen Chao, C. K. Shih, K.
A. Anselm, A. Srinivisan, and B. G. Streetman, Appl. Phys. Lett. 69,
1214 (1996).
13. Formation of Atomically
Flat Silver Films on GaAs
with a "Silver Mean" Quasi Periodicity, Arthur R. Smith,
Kuo-Jen Chao, Qian Niu, and Chih-Kang Shih, Science 273, 226
(1996).
12. Scanning Tunneling
Microscopy Investigation of the Dimer Vacancy-Dimer Vacancy Interaction
on the Si(001) 2xn Surface , A. R. Smith, F. K. Men, K.-J. Chao,
Zhenyu Zhang, and C. K. Shih, J. Vac. Sci. Technol. B 14, 909
(1996).
11. Variable Low-Temperature
Scanning Tunneling Microscopy Study of Si(001): Nature of the
2x1->c(2x4) Phase Transition , A. R. Smith, F. K. Men, K.-J.
Chao, and C. K. Shih,
J. Vac. Sci. Technol. B 14, 914 (1996).
10. Direct Determination of
Exact Charge States of Surface
Point Defects Using Scanning Tunneling Microscopy: As vacancies
on GaAs(110) , Kuo-Jen Chao, Arthur R. Smith, and C. K. Shih,
Phys. Rev. B 53, 6935 (1996).
9. Influence of Various
Growth Parameters on the Interface Abruptness of AlAs/GaAs Short Period
Superlattices , A. R. Smith, Kuo-Jen Chao, and C. K. Shih, Y. C.
Shih, K.
A. Anselm, and B. G. Streetman, J. Vac. Sci. Technol. B 13,
1824 (1995).
8. Cross-Sectional Scanning
Tunneling Microscopy Study
of GaAs/AlAs Short Period Superlattices: The Influence of Growth
Interrupt on the Interfacial Structure , A. R. Smith,
Kuo-Jen Chao, and C. K. Shih, Y. C. Shih and B. G. Streetman, Appl.
Phys. Lett. 66, 478 (1995).
7. A New Variable Low
Temperature Scanning Tunneling Microscope For Use In Ultra High Vacuum ,
A. R. Smith and C. K. Shih, Rev. Sci. Instrum. 66, 2499 (1995).
6. Dimer Vacancy-Dimer
Vacancy Interaction on the Si(001)
Surface: The Nature of the 2xn Structure , Fu-Kwo Men,
Arthur R. Smith, Kuo-Jen Chao, Zhenyu Zhang, and Chih-Kang Shih,
Phys. Rev. B 52, R8650 (1995).
5. A New High-Resolution
Two-Dimensional Micropositioning Device for Scanning Probe Microscopy
Applications ,
A. R. Smith, S. Gwo, and C. K. Shih, Rev. Sci. Instrum. 65,
3216 (1994).
4. A Comparative Study of
Cross-Sectional Scanning Tunneling Microscopy /Spectroscopy on III-V
Hetero- and Homostructures: UHV-Cleaved vs. Sulfide-Passivated ,
A. R. Smith,
S. Gwo, K. Sadra, Y. C. Shih, B. G. Streetman, and C. K. Shih,
J. Vac. Sci. Technol. B 12, 2610 (1994).
3. Cross-Sectional Scanning
Tunneling Microscopy and Spectroscopy of Passivated III-V
Heterostructures , S. Gwo, A. R.
Smith, K.-J. Chao, C. K. Shih, K. Sadra, and B. G. Streetman, J. Vac.
Sci. Technol. A 12, 2005 (1994).
2. Scanning Tunneling
Microscopy of Doping and Compositional III-V Homo- and Heterostructures
, S. Gwo, K.-J. Chao,
A. R. Smith, C. K. Shih, K. Sadra, and B. G. Streetman, J. Vac.
Sci. Technol. B 11, 1509 (1993).
1. Vacancy Migration, Adatom
Motion, and Atomic Bistability on the GaAs(110) Surface Studied by
Scanning Tunneling Microscopy , S. Gwo, A. R. Smith, and C. K.
Shih, J. Vac. Sci. Technol. A 11, 1644 (1993).
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Arthur R. Smith
Wed Jun 25 15:12:27 EDT 1997