Wide Band Gap Materials Research

Professors Kordesch, Ingram , Smith , Heremans, Richardson and Lozykowski are developing novel methods of growing  wide band gap materials including crystallline and amorphous forms of SiC, GaN,  AlN and AlGaN alloys. In the last several years, we have established a major program in the basic physics of these materials thanks to a generous URISP grant from the Department of Defense. This includes a modern metallo-organic chemical vapor deposition apparatus. Professor Drabold  and a postdoctoral fellow are engaged in atomistic studies of the amorphous forms of these materials and their associated electronic and optical properties. Professor  Ulloa is working on the theory of shallow donor impurities in GaN and modeling growth of this and related materials. Both theorists are working closely with the multi-department experimental program. Experimental faculty: Heremans, Kordesch, Smith, Richardson, Lozykowski, Ingram Theoretical faculty: Drabold, Ulloa