1.   D. A. Drabold, Easily evaluated expressions for second and fourth moments of resonant absorption spectra for spin systems , Phys. Rev. B 37 565 (1988). 

2.   D. A. Drabold, P. A. Fedders, Dipolar Broadening in Magnetically Diluted Lattices , Phys. Rev. B 37 3440 (1988). 

3.   D. A. Drabold, P. A. Fedders, Nuclear spin-lattice relaxation times for mixtures of ortho and para H 2 : I High ortho concentration , Phys. Rev. B 39 1993 (1989). 

4.   D. A. Drabold, P. A. Fedders, Nuclear spin-lattice relaxation times for mixtures of ortho and para H 2 : II. Low ortho concentration , Phys. Rev. B 39 6325 (1989). 

5.   D. A. Drabold, P. A. Fedders, O. F. Sankey and J. D. Dow, Convergence of force calculations in non-crystalline silicon , Phys. Rev. B 42 5345 (1990) .

6.   O. F. Sankey, D. J. Niklewski, D. A. Drabold and J. D. Dow, Molecular dynamics determination of electronic and vibrational spectra and equilibrium structures of small Si clusters , Phys. Rev. B 41 12750 (1990). 

7.   D. A. Drabold, P. A. Fedders, O. F. Sankey and J. D. Dow, Molecular dynamics simulations of a-Si , Phys. Rev. B 42 5135 (1990) .

8.   D. A. Drabold, O. F. Sankey, R. Wang and S. Klemm, Efficient ab initio molecular dynamics simulations of carbon , Phys. Rev. B 43 5132 (1991) .

9.   D. A. Drabold and G. L. Jones, Maximum-entropy approach to series extrapolation and analytic continuation, J. Phys. A: Math. Gen 24  4705 (1991).

10. D. A. Drabold and G. L. Jones, Maximum-entropy in condensed matter theory [maxent90 proceedings, Kluwer, 1991], pdf here.

11. D. A. Drabold, P. A. Fedders, S. Klemm, O. F. Sankey, The finite temperature properties of amorphous silicon , Phys. Rev. Lett. 67 2179 (1991). 

12. P. A. Fedders, Y. Fu, D. A. Drabold, The Atomistic origins of light induced defects in amorphous Si, Phys. Rev. Lett. 68 1888 (1992). 

13. P. A. Fedders, D. A. Drabold and S. Klemm, Defects, tight binding and first principles molecular dynamics simulations of a-Si , Phys. Rev. B 45 4048 (1992). 

14. R. B. Phillips, D. A. Drabold, T. Lenosky, G. B. Adams, O. F. Sankey, Electronic Structure of Schwartzite , Phys. Rev. B (Rapid) 46 1941 (1993) .

15. G. B. Adams, O. F. Sankey, M. O’Keefe, J. B. Page and D. A. Drabold, Energetics of large fullerenes: balls, tubes and capsules , Science 256 1792 (1992).

16. D. A. Drabold, O. F. Sankey, Maximum-entropy approach for linear scaling in the electronic structure problem , Phys. Rev. Lett. 70 3631 (1993) .

17. K. Kilian, D. A. Drabold and J. B. Adams, First principles simulations of a-Si and a-Si:H surfaces , Phys. Rev. B 48 17393 (1993). 

18. S. H. Yang, D. A. Drabold and J. B. Adams, Ab initio study of clean and hydrogenated diamond (100) surface , Phys. Rev. B 48 5261 (1993). 

19. P. A. Fedders and D. A. Drabold, Hydrogen and defects in first principles MD generated a-Si:H , Phys. Rev. B 47 13277 (1993). 

20. P. Ordejon, D. A. Drabold, M. Grumbach and R. M. Martin, Unconstrained minimization approach for electronic computations which scales linearly with system size , Phys. Rev. B 48 14646 (1993). 

21. D. A. Drabold, P. A. Fedders, P. Stumm, Structure, dynamics and electronic properties of diamond like amorphous carbon—Comment , Phys. Rev. Lett. 72 2666 (1994) .

22. D. A. Drabold, P. Stumm, P. A. Fedders, Theory of diamond like amorphous carbon , Phys. Rev. B 49 16415 (1994). 

23. O. F. Sankey, D. A. Drabold, A. Gibson, Projected random vectors and the recursion method in the electronic structure problem , Phys. Rev. B 50 1376 (1994). 

24. A. Caro, D. A. Drabold and O. F. Sankey, Evidence of lattice instability of the Al-Si solid solution: dynamical properties of the Si substitutional and Al vacancy , Phys. Rev. B 49 6647 (1994). 

25. D. R. Alfonso, S. Yang and D. A. Drabold, Ab initio studies of hydrocarbon absorption on stepped diamond surfaces , Phys. Rev. B 50 15369 (1994). 

26. D. R. Alfonso, D. A. Drabold and S. E. Ulloa, Phonon modes of diamond (100) surfaces from ab initio calculations , Phys. Rev. B 51 1989 (1995). 

27. P. Ordejon, D. A. Drabold, R, M. Martin, M. Grumbach, Linear system size scaling methods for electronic structure calculations , Phys. Rev. B 51 1456 (1995). 

28. P. Ordejon, D. A. Drabold, R. M. Martin, Linear Scaling Method for phonon calculations from electronic structure , Phys. Rev. Lett. 75 1324 (1995). 

29. P. Stumm and D. A. Drabold, Structural and electronic properties of nitrogen doped fourfold amorphous carbon , Solid State Comm. 93  617 (1995).

30. D. A. Drabold, P. Ordejon, J. Dong and R. M. Martin, Spectral properties of large fullerenes: from cluster to crystal , Solid State Comm. 96 833 (1995). 

31. J. Wang, D. A. Drabold, A. Rockett, Binding and diffusion of a Si adatom around type A steps on Si(001) c(4x2), App. Phys. Lett. 66 1954 (1995).

32. J. Wang, D. A. Drabold and A. Rockett, Binding and diffusion of a Si adatom around type B steps on Si(001) c(4x2), Surf. Science 344 251 (1995).

33. R. L. Cappelletti, M. Cobb, D. A. Drabold, W. A.Kamitakahara, A neutron scattering and ab initio molecular dynamics study of vibrations in glassy GeSe 2 , Phys. Rev. B 52 9133 (1995). 

34. D. R. Alfonso, D. A. Drabold, S. E. Ulloa, Structural, electronic and vibrational properties of diamond (100), (110) and (111) surfaces from ab initio calculations , Phys. Rev. B 51 14669 (1995). 

35.  J. Dong and D. A. Drabold, Band tail states and the localized to extended transition in amorphous diamond , Phys. Rev. B 54 10284 (1996). 

36. M. Cobb, D. A. Drabold and R. L. Cappelletti, Ab initio study of the structure, dynamics and electronic states of g-GeSe 2 , Phys. Rev. B 54 12162 (1996). 

37. D. A. Drabold, P. A. Fedders and M. P.  Grumbach Gap formation and defect states in tetrahedral amorphous carbon Phys Rev B 54 5480-5484 (1996) 

38. S. Itoh, P. Ordejon, D. A. Drabold and R. M. Martin, Structure and energetics of giant fullerenes: an order N molecular dynamics study . Phys. Rev. B 53 2132 (1996). 

39. S. Itoh, P. Ordejon, D. A. Drabold and R. M. Martin, Order-N tight binding molecular dynamics: application to giant fullerenes , Sci. Rep. RITU A41  163 (1996).

40. P. A. Fedders and D. A. Drabold, Molecular dynamics investigation of conformational fluctuations and low energy vibrational excitations in a-Si:H , Phys. Rev. B 53 3841 (1996) .

41. J. Song, S. E. Ulloa and D. A. Drabold, Exciton-induced lattice relaxation and the electronic and vibrational spectra of Si clusters , Phys. Rev. B 53 8042 (1996) .

42. D. R. Alfonso, D. A. Drabold and S. E. Ulloa, Structure of diamond (100) stepped surfaces from ab initio calculations, J. Phys. Cond. Matt. 8  641 (1996).

43. D. R. Alfonso, C. Noguez, D. A. Drabold and S. E. Ulloa, First Principles studies of hydrogenated Si(111) 7x7 , Phys. Rev. B 54 8028 (1996).

44. D. A. Drabold, Electronic Structure Methods with applications to amorphous semiconductors in Amorphous Insulators and Semiconductors, M. F. Thorpe and M. I Mitkova Eds, NATO Advanced Study Institute Series, Kluwer, Dordrecht, 1997.

45. H. Roder, R. N. Silver, Jian Jun Dong and D. A. Drabold, The Kernel Polynomial Method for a non orthogonal electronic structure calculation of amorphous diamond . Phys. Rev. B 55 15382 (1997).

46. S. H. Yang, D. A. Drabold, J. B. Adams, P. Ordejon, K. Glassford, Density functional study of small platinum clusters . J. Phys. Cond. Matt. 9 L39 (1997).

47. P. Stumm and D. A. Drabold, Can Amorphous GaN serve as a useful electronic material? ” Phys. Rev. Lett. 79 677 (1997).

48. C. Cobb and D. A. Drabold, Ab initio study of liquid GeSe2,   Phys. Rev. B 56 3054 (1997).

49. P. Stumm, D. A. Drabold, P. A. Fedders, Defects, doping and conduction mechanisms in nitrogen doped tetrahedral amorphous carbon, J. App. Phys. 81  1289 (1997).

50. P. A. Fedders and D. A. Drabold,  Theory of boron doping in a-Si:H , Phys. Rev. B 56 1864 (1997) .

51. J. Dong and D. A. Drabold, Atomistic structure of band tail states in amorphous silicon , Phys. Rev. Lett. 80 1928 (1998).

52. U. Stephan and D. A. Drabold, Order N projection method for first principles calculation of electronic quantities and Wannier functions , Phys. Rev. B 57 6391 (1998).

53. J. Dong and D. A. Drabold, Ring formation and the structural and electronic properties of tetrahedral amorphous carbon surfaces , Phys. Rev. B 57 15591 (1998).

54. X. Zhang and D. A. Drabold, Evidence for valence alternation and a new model of amorphous Se , J. Non. Cryst. Sol. 241 195 (1998).

55. U. Stephan, D. A. Drabold and R. M. Martin, Improved accuracy and acceleration of variational order N electronic structure computations by projection techniques , Phys. Rev. B 58 13472 (1998).

56. S. Nakhmanson and D. A. Drabold, Approximate ab initio calculation of vibrational properties of hydrogenated amorphous silicon with inner voids, Phys. Rev. B 58 15325 (1998).

57. P. A. Fedders, D. A. Drabold and S. Nakhmanson, Theoretical study of band tail states in amorphous Si, Phys. Rev. B 58 15624 (1998).

58. D. A. Drabold and P. A. Fedders,  The electronic consequences of the mutual presence of structural and thermal disorder ,  Phys. Rev. B Rapid Comm. 60 R721 (1999)

59. P. A. Fedders, D. A. Drabold, P. Ordejon, G. Fabricius, E. Artacho, D. Sanchez-Portal and J. Soler, The application of the Local spin density approximation to amorphous Si and tetrahedral amorphous carbon, Phys. Rev. B 60 10594 (1999).

60. D. A. Drabold, U. Stephan, J. Dong and S. Nakhmanson, Electronic structure of amorphous silicon ,  J. Molecular Graphics and Modeling 17  285-291 (2000).

61. M. Yu, S. E. Ulloa and D. A. Drabold, Local basis quasiparticle calculations and the dielectric response function of Si clusters, Phys. Rev. B 61 2626 (2000).

62. G. Fabricius, E. Artacho, D. Sanchez-Portal, P. Ordejon, D. A. Drabold and J. M. Soler, Atomic layering at the liquid Si surface: a first principles simulation,   Phys. Rev. B 60 R16283 (1999).

63. X. Zhang and D. A. Drabold, Direct molecular dynamic simulation of light induced structural changes in amorphous selenium , Phys. Rev. Lett. 83 5042 (1999)

64. D. A. Drabold, Molecular Dynamic simulations of network glasses in “ Insulating and semiconducting glasses ”, P. Boolchand, Editor. World Scientific Press, Singapore (2000), pp. 607-652.

65. U. Stephan, R. M. Martin and D. A. Drabold,  Extended range computation of Wannier functions in amorphous semiconductors ,  Phys. Rev. B 62 6885 (2000).

66. D. A. Drabold, Anderson transition and thermal effects on electron states in amorphous Si , J. Non. Cryst. Sol.  266, 211 (2000 ).

67. S. Nakhmanson and D. A. Drabold, Computer Simulation of low energy excitations from voids in amorphous Si, J. Non. Cryst. Sol. 266  156 (2000).

68. S. Nakhmanson and D. A. Drabold, Low-temperature anomalous specific heat withouttunneling modes: a simulation for a-Si with voids , Phys. Rev. B 61 5376 (2000). Links to color images of low energy modes here.

69. N. Mousseau and D. A. Drabold, Numerical studies of the vibrational isocoordinate rule in chalcogenide glass ,  European Physical Journal B 17  667-671 (2000).

70. Jun Li and D. A. Drabold, First principles study of glassy arsenic triselenide , Phys. Rev. B 61 11998 (2000).

71. D. A. Drabold, S. Nakhmanson and X. Zhang, Electronic structure of amorphous insulators and photo structural effects in chalcogenide glasses , Properties and Applications of Amorphous Materials, M. F. Thorpe and L. Tichy, Eds., NATO Science Series, II. Mathematics, Physics and Chemistry, Vol 9 pp. 221-250 Kluwer (2001)

72. H. Chen, K. Chen, D. A. Drabold and M. E. Kordesch, Bandgap engineering in amorphous AlGaN alloys: Experiments and ab initio calculations , App. Phys. Lett. 77 1117-1119 (2000).

73. X. Zhang and D. A. Drabold, Structural and electronic properties of glassy GeSe2 surfaces , Phys. Rev. B 62 15695 (2000).

74. M. Durandurdu, D. A. Drabold and N. Mousseau, Approximate ab initio calculations of electronic structure of amorphous Si , Phys. Rev. B 62 15307 (2000).

75. Jun Li and D. A. Drabold, Direct calculation of light induced structural change and diffusive motion in glassy As 2 Se 3 , Phys. Rev. Lett . 85 2785 (2000).

76. X. Zhang and D. A. Drabold, Simulation of the response of amorphous Se to light, Intl. J. Modern Phys. B 15 3190 (2001).

77. S. M. Nakhmanson, N. Mousseau, G. T. Barkema, P. M. Voyles, D. A. Drabold, Low strain models of paracrystalline silicon , Intl. J. Mod. Phys. B 15 3253 (2001).

78. M. Durandurdu and D. A. Drabold, Ab initio simulation of first-order amorphous to amorphous phase transition in silicon ,   Phys. Rev. B 64 014101 (2001) .

79. X. Zhang and D. A. Drabold, Properties of the density matrix from realistic calculations Phys. Rev. B 63 233109 (2001).

80. A. Demkov, X. Zhang and D. A. Drabold, First principles simulation and current-voltage characteristic of atomistic metal-oxide-semiconductor structures, Phys. Rev. B 64 125306 (2001).

81. P. M. Voyles, N. Zotov, S. M. Nakhmanson, D. A. Drabold, J. M. Gibson, M. M. J. Treacy, and P. Keblinski, The Structure and Physical Properties of Paracrystalline Atomistic Models of Amorphous Silicon, J. Applied Physics 90 , 4437 (2001).

82. S. Nakhmanson, P. Voyles, N. Mousseau, G. Barkema and D. A. Drabold, Realistic models of paracrystalline Si , Phys. Rev. B 63 235207 (2001).

83. Jun Li and D. A. Drabold, Atomistic comparison between stoichiometric and non-stoichiometric glasses: the cases of As 2 Se 3 and As 4 Se 4 , Phys. Rev. B 64 104206 (2001).

84. G. Chen, H. Jain, S. Khalid, Jun Li,  D. A. Drabold and S. R. Elliott, Study of structural changes in Amorphous As 2 Se 3 by EXAFS under in-situ laser irradiation, Solid State Communications 120  149 (2001).

85. M. Yu, C. Jayanthi, D. A. Drabold, and S. Y. Wu, Strain relaxation mechanisms and local structural changes in SiGe alloys,   Phys. Rev. B 64 165205 (2001) .

86. Jun Li, D. A. Drabold, S. Krishnaswami, G. Chen and H. Jain, Electronic structure of glassy chalcogenides As 2 Se 3 and AsSe: a joint theoretical and experimental study, Phys. Rev. Letters 88 046803 (2002).

87. M. Durandurdu and D. A. Drabold, Simulation of pressure-induced polyamorphism in a chalcogenide glass  GeSe 2 , Phys. Rev. B 65 104208 (2002).

88. S. Nakhmanson, N. Mousseau and D. A. Drabold, “ Comment on Boson peak in amorphous silicon: A numerical study”  Phys. Rev. B 66 087201 (2002).

89. S. N. Taraskin, D. A. Drabold and S. R. Elliott, Spatial decay of the single-particle density matrix in insulators: analytic results in two and three dimension s ,  Phys. Rev. Lett. 88 196405 (2002).

90. S. D. Mahanti and D. A. Drabold, Defects in amorphous semiconductors , in Survey of Semiconductor Physics: Electrons and other particles in semiconductors, Vol I , K. Boer editor, pp 867-878 Wiley (2002); K. Kreher  and D. A. Drabold, Optical absorption  of disordered lattices ,  ibid . 845-854

91. K. Chen and D. A. Drabold, First principles molecular dynamics study of amorphous Al x Ga 1-x N alloys , J. App. Phys. 91  9743 (2002).

92. M. Durandurdu and D. A. Drabold, Ab initio simulation of high pressure phases of GaAs , Phys. Rev. B 66 045209 (2002).

93. Murat Durandurdu and D. A. Drabold, First order pressure-induced polyamorphism in germanium ,  Phys. Rev. B 66 041201® (2002)

94. Jun Li and D. A. Drabold, Atomistic simulation of the finite-temperature Anderson localization problem , Phys. Stat. Sol. 233 10 (2002) .

95. D. A. Drabold and Jun Li, Electrons and Phonons in amorphous silicon: deformation potentials and solutions of the time-dependent Schrodinger equation , MRS Conference Proceedings,  715  A14.1 (2002).

96. M. Durandurdu and D. A. Drabold , Ab initio simulation of pressure-induced low-energy excitations in amorphous silicon   Phys. Rev. B 66 155205 (2002).

97. G. Chen, H. Jain, M Vlcek, S Khalid, DA Drabold and SR Elliott, Atomistic observation of light-induced vector and scalar effects in a chalcogenide glass , National Synchrotron Light Source Scientific Highlight, NSLS Activity Report (2002).

98. S. N. Taraskin, P. A. Fry, D. A. Drabold and S. R. Elliott, Spatial decay of the single-particle density matrix in metals: analytic results in two dimensions Phys. Rev. B 66  233101 (2002).

99. M. Durandurdu and D. A. Drabold, Pressure-induced structural phase transition of paracrystalline silicon, Phys Rev B 66 205204 (2002).

100. D. A. Drabold, Jun Li and De Nyago Tafen, Simulations of AsSe Glasses J. Phys. Cond. Matt. 15 S1529 (2003).

101. D. A. Drabold, Approximate ab initio Simulations of amorphous silicon and glassy chalcogenides ,  Current Opinion in Solid State and Materials Science 5 509 (2002).

102. G. Chen, H. Jain, M. Vlcek, S. Khalid, J. Li, D. A. Drabold and S. R. Elliott, Observation of light polarization-dependent structural changes in chalcogenide glasses , App. Phys. Lett. 82 706 (2003).

103.  S. Blaineau, P. Jund and D. A. Drabold, Physical properties of GeS 2 glass using approximate ab initio molecular dynamics . Phys Rev B 67 094204 (2002).

104. M. Yu, C. S. Jayanthi, D. A. Drabold and S.-Y. Wu,  Enhanced Radiative Transition in Si-Ge nanoclusters , Phys. Rev. B 68 035404 (2003).

105. M. Durandurdu and D. A. Drabold, A theoretical investigation of amorphization and crystallization in silicon phases , Phys. Rev. B 67 212101 (2003) .

106. Jun Li and D. A. Drabold, A portrait of hopping between localized states: a density functional simulation of the finite-temperature Anderson problem , Phys. Rev B 68 033103 (2003).

107. K. Antoine, J. Li, D. A. Drabold and H. Jain, Photoinduced changes in the electronic structure of AS(2)Se(3) glass   J. Non-Cryst. Sol. 326 : 248-256 (2003).

108.G. Chen, H. Jain, M. Vlcek and D. A. Drabold, Study of light-induced vector changes in the local atomic structure of As-Se glasses by EXAFS  J. Non-Cryst. Sol.   326 : 257-262 (2003)

109. D. A. Drabold, Xiaodong Zhang and Jun Li, in A. Kolobov, Ed . Photo-induced metastability in amorphous semiconductors , Wiley-VCH, Berlin, pp 260-276 (2003).

110. D. Tafen and D. A. Drabold, Models of Binary glasses from Models of Tetrahedral Amorphous Semiconductors ,   Phys. Rev. B 68 165208 (2003).

111. R. Atta-Fynn, P. Biswas, P. Ordejon and D. A. Drabold, Systematic study of electron localization in an amorphous semiconductor,   Phys Rev B 69 085207 (2004).

112. P. Biswas, R. Atta-Fynn and D. A. Drabold, Realistic modeling of amorphous silicon from reverse monte carlo approach , Phys. Rev. B 69 195207 (2004).

113. R. Atta-Fynn, P. Biswas and D. A. Drabold, The electron-phonon coupling is large for localized states , Phys. Rev. B 69 245204 (2004).

114. J. J. Ludlam, S. N. Taraskin, S. R. Elliott and D. A. Drabold, Universal features of eigenstates in disordered systems ,  J. Phys. Cond. Matter 17 L321 (2005).

115. D. Tafen and D. A. Drabold, New Models of Binary IV-VI Glasses , Phys. Rev. B 71 054206 (2005).

116.  P. Biswas, D. Tafen and D. A. Drabold, Experimentally Constrained Molecular Relaxation: The Case of GeSe 2 , Phys Rev B 71 054204 (2005).

117.  D. A. Drabold, P. Biswas, D. Tafen and R. Atta-Fynn, Recent developments in computer modeling of amorphous materials [html format] , [ pdf format here ]  In Non-Crystalline Materials for Optoelectronics , Edited by G. Lucovsky and M. Popescu, INOE, Bucharest pp 441-467 (2004).

118.  P. Biswas, D. N. Tafen, R. Atta-Fynn and D. A. Drabold, Inclusion of experimental information in first principles modeling of materials ,  J. Phys. Cond. Matter 16 S5173 (2004).

119.  T. Abtew, P. Ordejon and D. A. Drabold, Thermally driven hopping and electron transport in amorphous materials from density functional calculations ,  J. Phys. Cond. Matter 16 S5289 (2004).

120. D. N. Tafen, D. A. Drabold and M. Mitkova,  Silver transport in Ge x Se 1−x :Ag materials: ab initio simulation of a solid electrolyte ,  Phys. Rev. B 72 054206 (2005).

121. K.Bandyopadhyay, A.K.Bhattacharya, Parthapratim Biswas, D.A.Drabold   Maximum Entropy and the Problem of Moments: a Stable Algorithm , Phys Rev E 71 057701 (2005).

122. T. Abtew, D. A. Drabold and P. C. Taylor, Studies of SiH 2 and its potential role in light-induced metastability in a-Si:H, Applied Physics Letters 86 241916 (2005).

123. K. Antoine, H. Jain, D. A. Drabold. J. Li, M. Vlcek and A. C. Miller, Photoinduced changes in the electronic structure of As 4 Se 3 glass , J. Non-Cryst. Sol. 349 162 (2004).

124. D. N. Tafen, D. A. Drabold and M. Mitkova, Direct ab initio simulation of silver ion dynamics in chalcogenide glasses , Phys. Stat. Sol. B 242 R55 (2005) (Featured Rapid Research Letter)

125. D. A. Drabold, Review of Advances in Amorphous Semiconductors by Singh and Shimakawa , MRS Bulletin 30 616 (Aug 2005).

126. T. Abtew and D. A. Drabold, Simulation of light-induced changes in hydrogenated amorphous silicon , J. Phys Cond. Matt. 18 L1 (2006).

127. T. Abtew and D. A. Drabold, Direct ab initio simulation of light-induced structural changes in hydrogenated amorphous silicon , Phys. Rev. B 74 085201 (2006).

128. D. A. Drabold and S. K. Estreicher: Defect theory, an armchair history, in Theory of Defects in Semiconductors , Edited by D. A. Drabold and S. K. Estreicher, Springer-Verlag (2006).

129. D. A. Drabold and T. A. Abtew: Defects in amorphous semiconductors: amorphous silicon, Edited by D. A. Drabold and S. K. Estreicher, Springer-Verlag (2006).

130. D. A. Drabold and S. K. Estreicher, Theory of Defects in Semiconductors , Edited by D. A. Drabold and S. K. Estreicher,  Topics in Applied Physics 104 , Springer (2006).

131. T. A. Abtew and D. A. Drabold, First principles molecular dynamics study of amorphous SiGe alloys , Phys. Rev. B 75 045201 (2007) )

132. T. A. Abtew and D. A. Drabold, Light-induced structural changes in hydrogenated amorphous silicon ,  J. Optoelectron. Adv. Mater. 8 1979 (2006).

133. T. A. Abtew, F. Inam and D. A. Drabold, Thermally stimulated H diffusion and emission in hydrogenated amorphous silicon , Europhys. Lett. 79 36001 (2007).

134. P. Biswas, R. Atta-Fynn and D. A. Drabold, Experimentally Constrained Molecular Relaxation: the case of Hydrogenated Amorphous Silicon, Phys. Rev. B 76 125210 (2007)..

135. T. A. Abtew, M. Zhang and D. A. Drabold, Ab initio estimate of the temperature dependence of electrical conductivity in a model disordered material: a-Si:H Phys. Rev. B 76 045212 (2007).

136. P. Biswas, R. Atta-Fynn, S. Chakraborty and D. A. Drabold, Real space information from fluctuation electron microscopy: application to amorphous silicon, J. Phys. Cond. Matt. 19 455202 (2007).

137. F. Inam, D. A. Drabold, M. Shatnawi, D. Tafen, P. Chen and S. Billinge, Intermediate phase in GeSe glasses: experiment and simulation  J. Phys. Cond. Matt. 19 455206 (2007).

138. 138.D. A. Drabold, T. A. Abtew, F. Inam and P. Yue, Network structure and dynamics of hydrogenated amorphous silicon J. Non-Cryst. 354 2149 (2008).
     

139. 139.T. A. Abtew, M. Zhang, P. Yue and D. A. Drabold, On the origin of the Meyer-Neldel rule for the electrical conductivity in a-Si:H. J. Non-Cryst. Sol. 354 2909 (2008).
     

140. 140.F. Inam and D. A. Drabold, Theoretical study of an amorphous chalcogenide surface. J. Non-Cryst. Sol. 354 2495 (2008)
     

141. 141.Y. Pan, M. Zhang and D. A. Drabold, Topological and topological-electronic correlations in amorphous Si, J. Non. Cryst. Sol. 354 3480 (2008)
     

142. 142.J. R. Abelson, D. A. Drabold, S. R. Elliott, P. M. Voyles, Proceedings of the International Conference on Nanoscale Order in Amorphous and Partially Ordered Solids, Trinity College, Cambridge, UK, July 9-11, 2007. J. Phys. Cond. Matt. 19 450301 (2007).
     

143. 143.P. Biswas and D. A. Drabold, Inverse approach to atomistic modeling: applications to amorphous silicon hydride and germanium diselenide,  J. Non. Cryst. Sol. 354 2697 (2008).
     

144. 144.Y. Pan, F. Inam, M. Zhang and D. A. Drabold, Atomistic origin of Urbach tails in amorphous silicon, Phys. Rev. Lett. 100 206403 (2008).
     

145. 145.S. Chakraborty, D. C. Bobela, P. C. Taylor and D. A. Drabold, Voids in a-Si:H: comparison of ab initio simulations and proton NMR,  MRS Symp. Conf. Proc. 1066 A11-02 (2008).
     

146. 146.M. Zhang, Y. Pan, F. Inam and D. A. Drabold, A semi-quantitative scattering theory of amorphous materials, Submitted to Phys. Rev. Lett. (5/2008).
     

147. 147.F. Inam, G. Chen, D. N. Tafen and D. A. Drabold, Electronic signature of the intermediate phase in GeSe glasses: a joint experimental and theoretical study, Submitted to Phys. Rev. Lett. (6/2008).
     

148. 148.F. Inam, G. Chen, D. N. Tafen and D. A. Drabold, Intermediate Phase in Germanium-selenide glasses: a theoretical and experimental study, To appear in Rigidity and Boolchand Intermediate Phases in nanomaterials, INOE, Bucharest (2008).
     

149. 149.K. Antoine, H. Jain, M. Vlcek, S. D. Senanayake and D. A. Drabold, Chemical origin of polarization-dependent photoinduced changes in aresenic selenide glass film via in situ synchrotron X-Ray photoelectron spectroscopy, Submitted to Phys. Rev. B (8/2008)
     

150. 150.P. Biswas, D. N. Tafen, F. Inam, B. Cai and D. A. Drabold, Materials modeling by design: application to amorphous solids, Invited Review for J. Phys. Cond. Matter (In Press, 2008).