Education
o PhD  in Physics, August 2001, Ohio University (advisor Dr. Martin E. Kordesch)
o M.S. in Physics, November 1998, Ohio University (advisor Dr. Gerald R. Harp), GPA 3.89
o B.S. in Physics, July 1994, University of Bucharest , GPA 3.80

Employment

- Research/Teaching Associate, enrolled in Ph.D. Program in Physics, Ohio University, 06/97 – 08/2001

-involved in electrical characterization of deep level defects in wide band gap materials (GaN, SiC, ScN, GaAs) using Deep Level Transient Spectrometry
- experience in rf and dc plasma sputtering deposition at room, low and high temperature  of nitride materials (e.g. ScN, AlN, GaN, etc)
-experience in nitrides characterization (thickness, band gap, phototransmission and transport coefficients measurements, photo and cathodoluminescence, photolithography, reactive ion etching and ohmic contacts, diode fabrication- Schottky and p-n junctions)
-experience in sputtering and  evaporation of metallic contacts
- magnetic thin films and superlattices growth and characterization (X-ray diffraction, Kerr magnetometry, Electron Microscopy, X-ray Magnetic Circular Dichroism, Magnetoresistance measurements);
-3-D visualization using Virtual Reality Modeling Language (VRML);
-+2 years of teaching university undergraduate courses and laboratories to engineering, science and non-science majors.

 
-Teaching Associate, enrolled in Ph.D. Program in Physics, University of North Texas, 08/96-06/97,GPA 4.0
-Researcher, Institute of Microtechnology, Bucharest, 08/94 - 08/96,  Bio and chemical sensors laboratory

Publications

1. F.Perjeru, R. L. Woodin, and M.E. Kordesch, “Influence of annealing temperature upon deep levels in 6H SiC” – to be published in Physica B;

2. F. Perjeru, X. Bai, and  M.E. Kordesch, “Electrically active deep levels in n- ScN/p+ Si heterojunctions”, submitted to Applied Physics Letters;

3.  F.Perjeru, X. Bai, M.I. Ortiz-Libreros, R. Higgins, and M.E. Kordesch, "ScN/GaN heterojunctions: fabrication and characterization"- Surface Science,  -175-176, pp 491-495, 2001;

4.  M.I. Ortiz-Libreros, F. Perjeru, X. Bai, and M.E. Kordesch, "Investigation of metal contacts on ScN" - Surface Science,  -175-176, pp 512-516, 2001;
5. F. Perjeru, X. Bai, M.I. Ortiz-Libreros, and M.E. Kordesch, "Characterization    of ScN Heterojunctions", Proceedings of 2000 IEEE/Cornell Conference on High Performance Devices, IEEE catalog number :00CH37122, p.P4;
6. Jadwisienczak WM, Lozykowski HJ, Perjeru F, et al.,Appl. Phys. Lett. 76: (23) 3376-3378 Jun 5 2000 ;
7. Dimitrova V. I., Perjeru F., Chen Hong, and Kordesch M., Proceedings of the Materials Research Society Spring Meeting V. 621: Electron Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays, April 24-28, 2000, San Francisco.
8. Perjeru F, Schwickert MM, Lin T, et al., Phys. Rev. B 61: (6) 4054-4059 Feb. 1 2000
9. Antel WJ, Perjeru F, Harp GR, Phys Rev Lett 83: (7) 1439-1442 Aug. 16 1999;
10.  " Ferromagnetic hcp Fe in Fe/Re (001) multilayers", M.S. Thesis, November 1998, Ohio University;
11. "Effect of AC eletric fields on E.Coli growth", B.S. Thesis, June 1994, University of Bucharest.

 
Programming
o C++, Lab View, VRML, IDL, Java, Fortran